h55s1g62mfp-60 Hynix Semiconductor, h55s1g62mfp-60 Datasheet - Page 8
h55s1g62mfp-60
Manufacturer Part Number
h55s1g62mfp-60
Description
64mx16bit Mobile Sdram
Manufacturer
Hynix Semiconductor
Datasheet
1.H55S1G62MFP-60.pdf
(53 pages)
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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
h55s1g62mfp-60M
Manufacturer:
HYNIX
Quantity:
8 500
Company:
Part Number:
h55s1g62mfp-60M-C
Manufacturer:
HYNIX
Quantity:
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156
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
Notes :
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
AC OPERATING TEST CONDITION
Rev 1.2 / Jul. 2008
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Parameter
Parameter
Parameter
Symbol
VDDQ
VDD
VIH
VIL
(T
A
= -30 to 85
(T
A
= -30 to 85
0.8*VDDQ
Min
-0.3
1.7
1.7
o
C )
o
VIN, VOUT
C, V
Symbol
1Gbit (64Mx16bit) Mobile SDR Memory
VDDQ
TSTG
VDD
IOS
PD
TA
Typ
1.8
1.8
DD =
-
-
VIH / VIL
Symbol
Voutref
tR / tF
Vtrip
CL
1.8V, V
VDDQ+0.3
0.2*VDDQ
-0.3 ~ VDDQ+0.3
Max
1.95
1.95
SS
-55 ~ 150
-0.3 ~ 2.7
-0.3 ~ 2.7
= 0V)
-30 ~ 85
Rating
0.9*VDDQ /
H55S1G62MFP Series
0.2*VDDQ
0.5*VDDQ
0.5*VDDQ
50
1
Value
1
Unit
V
V
V
V
Unit
Unit
Note
mA
o
o
W
1, 2
1, 2
1, 2
V
V
V
pF
ns
C
C
V
V
V
1
11
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