k4x1g163pc Samsung Semiconductor, Inc., k4x1g163pc Datasheet - Page 15

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k4x1g163pc

Manufacturer Part Number
k4x1g163pc
Description
64mx16 Mobile Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K4X1G163PC - L(F)E/G
15. AC Operating Test Conditions
16. Input/Output Capacitance(V
Input capacitance
(A0 ~ A13, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Output timing measurement reference level
Input timing measurement reference level
Input signal minimum slew rate
AC input levels (Vih/Vil)
Output load condition
Parameter
Output
Parameter
10.6KΩ
Output
DD
=1.8
(V
Figure 5. DC Output Load Circuit
Figure 6. AC Output Load Circuit
DD
,
= 1.7V to 1.95V, T
V
DDQ
=1.8V
1.8V
Z0=50Ω
13.9KΩ
20pF
V
V
- 18 -
OH
OL
,
Symbol
0.8 x VDDQ / 0.2 x VDDQ
T
COUT
CIN3
CIN1
CIN2
(DC) = 0.1 x VDDQ , I
(DC) = 0.9 x VDDQ , I
C
c
= 25°C
= -25 to 85°C)
See Figure 6
0.5 x VDDQ
0.5 x VDDQ
Value
Vtt=0.5 x V
1.0
50Ω
20pF
,
f=1MHz)
Min
1.5
1.5
2.0
2.0
DDQ
OL
OH
= 0.1mA
= -0.1mA
Mobile DDR SDRAM
Max
3.0
3.5
4.5
4.5
November 2007
V/ns
Unit
V
V
V
Unit
pF
pF
pF
pF

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