dmg2307l Diodes, Inc., dmg2307l Datasheet - Page 3

• Manufacturer Part Number: dmg2307l
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG2307L
Document number: DS35414 Rev. 1 – 2
0.35
0.25
0.15
0.05
8.0
6.0
4.0
2.0
0.0
1.6
1.4
1.2
0.8
0.6
0.4
0.3
0.2
0.1
1
0
-50
0
0
Fig. 5 On-Resistance Variation with Temperature
0.5
-25
V , DRAIN -SOURCE VOLTAGE(V)
T , JUNCTION TEMPERATURE ( C)
Fig. 1 Typical Output Characteristics
DS
J
1
Fig. 3 Typical On-Resistance vs.
V
I , DRAIN SOURCE CURRENT
Drain Current and Gate Voltage
D
GS
V
0
2
=10V
GS
1.5
V
GS
=4.5V
V
=4.0V
GS
25
2
=3.5V
2.5
50
4
3
75
3.5
V
GS
100
V
V
=3.0V
6
GS
GS
4
=2.5V
=2.0V
°
125
4.5
150
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8
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0.16
0.12
0.08
0.04
0.16
0.12
0.08
0.04
0.2
0.2
8
6
4
2
0
0
0
0
-50
V
0
Fig. 6 On-Resistance Variation with Temperature
DS
V
0.5
GS
= 5.0V
-25
= 4.5V
Fig. 2 Typical Transfer Characteristics
V
T , JUNCTION TEMPERATURE ( C)
I , DRAIN SOURCE CURRENT (A)
GS
J
1
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
, GATE SOURCE VOLTAGE(V)
T = 85 C
0
1.5
A
2
T = 25 C
A
T = -55 C
A
°
25
°
2
°
2.5
T = 125 C
50
A
4
3
°
75
T = 25 C
A
3.5
DMG2307L
V
I =2A
D
T = 150 C
GS
100
°
T = 150 C
A
T = -55 C
T = 125 C
A
6
=4.5V
T = 85 C
A
A
4
V
I =2.7A
A
D
GS
© Diodes Incorporated
°
125
°
=10V
4.5
°
°
°
°
July 2011
150
5
8