dmg2307l Diodes, Inc., dmg2307l Datasheet - Page 4

• Manufacturer Part Number: dmg2307l
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG2307L
Document number: DS35414 Rev. 1 – 2
1000
1.6
1.2
0.8
0.4
100
10
2
0
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
8
6
4
2
0
0
0
-25
Fig. 11 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
Fig. 9 Typical Junction Capacitance
5
Q , TOTAL GATE CHARGE (nC)
A
DS
2
g
0
10
25
4
50
15
75
6
20
100
C
RSS
8
125
25
f = 1MHz
C
C
OSS
ISS
150
10
30
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10000
1000
0.01
100
100
0.1
0.1
10
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
10
8
6
4
2
0
1
0.1
1
0
0
R
Limited
T
T = 25 C
Single Pulse
DS(ON)
J(MAX)
A
-I (A) @ DC
D
Fig. 8 Diode Forward Voltage vs. Current
-I (A) @P =10s
-V , DRAIN-SOURCE VOLTAGE (V)
0.2
D
V , SOURCE-DRAIN VOLTAGE (V)
°
5
V , DRAIN-SOURCE VOLTAGE(V)
= 150 C
Fig. 12 SOA, Safe Operation Area
DS
SD
DS
-I (A) @P =1s
D
°
W
0.4
-I (A) @P =100ms
D
10
1
W
0.6
W
-I (A) @P =10ms
15
D
T =125°C
0.8
A
W
10
20
-I (A) @P =1ms
1
D
T =150°C
DMG2307L
A
T =25°C
A
T =85°C
25
A
-I (A) @
P =10µs
1.2
W
D
W
© Diodes Incorporated
100
1.4
30
July 2011