ntgs3443 ON Semiconductor, ntgs3443 Datasheet - Page 2

• Manufacturer Part Number: ntgs3443
• Description: Power Mosfet 2 Amps, 20 Volts
• Manufacturer: ON Semiconductor

4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY−DRAIN DIODE RATINGS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
DS
GS
GS
GS
DS
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= −12 Vdc, V
= +12 Vdc, V
= V
= −4.5 Vdc, I
= −2.7 Vdc, I
= −2.5 Vdc, I
= −10 Vdc, I
GS
, I
D
D
= −250 mAdc)
DS
DS
= −10 mA)
D
D
D
D
DS
DS
= −20 Vdc, T
= −20 Vdc, T
= −4.4 Adc)
= −4.4 Adc)
= −3.7 Adc)
= −3.5 Adc)
= 0 Vdc)
= 0 Vdc)
Characteristic
J
J
= 25°C)
= 70°C)
(V
(I
(V
(V
S
DS
V
(I
(T
= −1.7 Adc, dI
DD
DS
S
GS
A
= −10 Vdc, V
= −1.7 Adc, V
= −20 Vdc, I
= −5.0 Vdc, V
= 25°C unless otherwise noted) (Notes 4 & 5)
= −4.5 Vdc, R
I
D
f = 1.0 MHz)
= −4.4 Adc)
S
GS
/dt = 100 A/ms)
D
http://onsemi.com
GS
GS
= −1.0 Adc,
g
= −4.5 Vdc,
= 6.0 W)
= 0 Vdc)
= 0 Vdc,
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
I
C
DS(on)
C
V
GS(th)
C
d(on)
Q
Q
Q
g
d(off)
DSS
GSS
GSS
t
FS
oss
t
t
SD
rss
iss
rr
tot
gs
gd
r
f
−0.60
Min
−20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.95
0.058
0.082
0.092
−0.83
Typ
565
320
120
8.8
7.5
1.4
2.9
10
18
30
31
30
−
−
−
−
−
−1.50
0.065
0.090
0.100
−100
Max
−1.0
−5.0
−1.2
100
25
45
50
50
15
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W