ntgs3443 ON Semiconductor, ntgs3443 Datasheet - Page 3

• Manufacturer Part Number: ntgs3443
• Description: Power Mosfet 2 Amps, 20 Volts
• Manufacturer: ON Semiconductor

0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
8
6
4
2
0
−50
0
1
1.5
0
V
GS
Figure 3. On−Resistance vs. Gate−to−Source
−V
I
V
−V
−25
D
= −5 V
Figure 5. On−Resistance Variation with
GS
DS,
Figure 1. On−Region Characteristics
= −4.4 A
2
GS,
= −4.5 V
0.4
T
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
0
2.5
V
GS
25
V
Temperature
0.8
= −3.5 V
GS
V
3
Voltage
= −4 V
GS
50
V
= −4.5 V
GS
TYPICAL ELECTRICAL CHARACTERISTICS
3.5
= −3 V
V
1.2
GS
75
V
= −2.5 V
V
GS
GS
4
100
= −1.5 V
= −2 V
I
T
D
T
1.6
J
J
= −4.4 A
= 25°C
= 25°C
4.5
125
http://onsemi.com
150
2
5
3
0.01
0.16
0.14
0.12
0.08
0.06
0.04
100
0.1
0.1
10
8
6
4
2
0
1
0.6
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
V
T
−V
−V
DS
J
1
= 25°C
DS,
≥ = −10 V
GS,
Figure 2. Transfer Characteristics
1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
−I
J
2
D,
= 125°C
T
J
DRAIN CURRENT (AMPS)
1.4
= 25°C
Gate Voltage
3
vs. Voltage
8
T
T
T
J
J
J
1.8
= 100°C
= 125°C
4
= 25°C
T
V
J
GS
12
= −55°C
5
= −2.5 V
2.2
V
V
6
GS
GS
V
16
GS
= −2.7 V
= −4.5 V
2.6
= 0 V
7
20
3
8