M500000009 AMD [Advanced Micro Devices], M500000009 Datasheet - Page 44
![no-image](/images/no-image-200.jpg)
M500000009
Manufacturer Part Number
M500000009
Description
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.M500000009.pdf
(63 pages)
- Current page: 44 of 63
- Download datasheet (889Kb)
FLASH AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
3. CE#f refers to chip enable input of active flash (device being addressed).
November 7, 2002
JEDEC
t
t
t
t
t
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
t
DVWH
WHDX
GHWL
EHWH
WHEH
WLWH
WLAX
WHDL
AVWL
WLEL
ELWL
AVAV
Parameter
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
GHWL
t
t
OEPH
t
BUSY
Std
SR/W
t
t
t
t
WPH
t
t
t
t
t
t
t
ASO
AHT
VCS
WC
WS
WH
WP
AH
DS
DH
CS
CH
RB
AS
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE#f or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time (CE#f to WE#)
CE#f Setup Time
WE# Hold Time (CE#f to WE#)
CE#f Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
CC
Setup Time (Note 1)
P R E L I M I N A R Y
Am50DL128CG
Word
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
70
70
40
40
30
Speed
0.4
15
20
30
50
90
0
0
0
0
0
0
0
0
0
7
4
0
85
85
45
45
35
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
43
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