APT10021JFLL_04 ADPOW [Advanced Power Technology], APT10021JFLL_04 Datasheet - Page 4

• Manufacturer Part Number: APT10021JFLL_04
• Description: Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
• Manufacturer: ADPOW [Advanced Power Technology]

FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
4000
3500
3000
2500
2000
1500
1000
148
100
400
300
200
100
500
50
10
16
12
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
5 10 15 20 25 30 35 40 45 50 55 60
5 10 15 20 25 30 35 40 45 50 55 60
1
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
LIMITED BY R DS (ON)
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
J
DD
G
ON
OPERATION HERE
J
DD
G
= 125°C
= 5Ω
I
= 125°C
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
= 667V
includes
= 667V
= 37A
100
Q
g
, TOTAL GATE CHARGE (nC)
V DS =500V
200
10
V DS =200V
I
I
t
D
D
d(on)
300
E
off
(A)
(A)
t
d(off)
V DS =800V
100
400
E
on
500
1000
600
1mS
100µS
10mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
30,000
10,000
12,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
8,000
6,000
4,000
2,000
300
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
80
70
60
50
40
30
20
10
1
0
0
0.3
5 10 15 20 25 30 35 40 45 50 55 60
0
0
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
J
DD
J
ON
DD
G
= 37A
= 125°C
= 125°C
5
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 667V
includes
= 667V
T J =+150°C
0.5
R
10
10
G
, GATE RESISTANCE (Ohms)
15 20 25 30 35 40
0.7
20
t
r
I
D
0.9
(A)
T J =+25°C
E
on
30
1.1
t
f
E
off
40
1.3
C oss
45 50
APT10021JFLL
C iss
C rss
1.5
50