APT6011B2VFR_04 ADPOW [Advanced Power Technology], APT6011B2VFR_04 Datasheet
APT6011B2VFR_04
Related parts for APT6011B2VFR_04
APT6011B2VFR_04 Summary of contents
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POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
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DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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RC MODEL Junction temp. (°C) 0.0302 Power 0.0729 (watts) 0.0955 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 ...
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OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 49A D ...