APT6025BVFR_05 ADPOW [Advanced Power Technology], APT6025BVFR_05 Datasheet - Page 3

• Manufacturer Part Number: APT6025BVFR_05
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
60
50
40
30
20
10
25
20
15
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
5
0
-50
25
V
0
0
V
DS
V DS > I D (ON) x R DS (ON)MAX.
GS
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
-25
T
V
GS
J
50
T
, JUNCTION TEMPERATURE (°C)
V GS =7V, 10V & 15V
50
C
= 10V
D
T J = +125°C
, CASE TEMPERATURE (°C)
T J = +25°C
[Cont.]
2
0
100
25
75
150
50
4
100
75
200
T J = -55°C
100 125 150
5.5V
6
4.5V
4V
5V
125
6V
250
150
300
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
V
FIGURE 5, R
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
= 10V @ 0.5 I
NORMALIZED TO
I
J
D
10
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
V GS =7V, 10V & 15V
C
5
V GS =10V
, CASE TEMPERATURE (°C)
0
0
20
DS
25
25
D
10
(ON) vs DRAIN CURRENT
[Cont.]
30
50
50
15
75
75 100 125 150
40
100 125 150
V GS =20V
20
5.5V
4.5V
50
4V
5V
6V
25
60