APT8056BVFR_04 ADPOW [Advanced Power Technology], APT8056BVFR_04 Datasheet - Page 4

• Manufacturer Part Number: APT8056BVFR_04
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
0.5
0.1
50
10
20
16
12
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
I
T C =+25°C
T J =+150°C
SINGLE PULSE
D
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
OPERATION HERE
D
50
Q
[Cont.]
g
, TOTAL GATE CHARGE (nC)
5
100
10
V DS =250V
150
V DS =100V
200
50 100
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
V DS =400V
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
250
300
Dimensions in Millimeters and (Inches)
350
800
TO-247 Package Outline
10µS
100µS
1mS
10mS
100mS
DC
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
6.15 (.242) BSC
4.50 (.177) Max.
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1.01 (.040)
1.40 (.055)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5.45 (.215) BSC
15,000
10,000
5,000
1,000
2-Plcs.
500
100
100
50
10
5
1
.01
0.2
V
V
DS
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T J =+150°C
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.4
15.49 (.610)
16.26 (.640)
.1
0.6
0.8
APT8056BVFR
1
1.0
T J =+25°C
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
1.2
C iss
C oss
C rss
10
1.4
1.6
50