SPB80N06S-08_05 INFINEON [Infineon Technologies AG], SPB80N06S-08_05 Datasheet - Page 2

• Manufacturer Part Number: SPB80N06S-08_05
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
footnote on page 3
2)
2)
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
V
SMD version
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=80 A
DS
page 2
=0 V, I
=V
=25 V, V
=25 V, V
=20 V, V
=10 V, I
=10 V, I
|>2|I
GS
D
, I
|R
2)
D
D
=1 mA
D
D
=240 µA
DS(on)max
GS
GS
DS
=80 A
=80 A
=0 V,
=0 V,
=0 V
3)
,
SPI80N06S-08, SPP80N06S-08
min.
2.1
55
-
-
-
-
-
-
-
-
-
-
Values
0.38
typ.
3.0
0.1
6.5
6.2
10
10
73
-
-
-
-
SPB80N06S-08
max.
100
100
0.5
7.7
62
62
40
4
1
8
-
-
2005-06-28
Unit
K/W
V
µA
nA
m
S