LS423 LINEAR [Linear Integrated Systems], LS423 Datasheet
LS423
Manufacturer Part Number
LS423
Description
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Manufacturer
LINEAR [Linear Integrated Systems]
Datasheet
1.LS423.pdf
(2 pages)
Linear Integrated Systems
SYMBOL
BV
BV
Y
Y
I
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor NOTE 1
-V
-V
-I
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
| V
|V
V
V
I
-I
-I
-I
ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise noted)
SYMBOL
Linear Integrated Systems
DSS
G
G(f)
G
GSS
GSS
fss
fs
GS(off)
GS
max.
GSS
DSO
GS1-2
max.
GSS
GGO
GS1-2
max.
max.
| max.
/ T| max. Drift vs. Temperature
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
Operating Range
Operating
High Temperature
At Full Conduction
High Temperature
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
Full Conduction
I
gfs=120 mho MIN
V
G
GS(off)
=0.25pA MAX
10
10
2.0
1.8
.25
250
1.0
1.0
=2V MAX
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
-65
+150 C
40V
40V
10mA
400mW @ +125 C
MIN.
25
15
2.0
1.8
.25
250
1.0
1.0
to +150 C
40
40
300
120
60
60
40
25
2.0
1.8
.25
250
1.0
1.0
TYP.
60
--
--
200
--
--
10
10
3.0
2.9
.500
500
3.0
3.0
MAX.
--
--
1500
350
1000
1800
MONOLITHIC DUAL N-CHANNEL JFET
.500
25
15
3.0
2.9
500
3.0
3.0
D1
LS421, LS422, LS423,
LS424, LS425, LS426
UNITS
22 X 20 MILS
LOW LEAKAGE LOW DRIFT
G1
40
25
3.0
2.9
.500
500
3.0
3.0
V
V
S1
mho
mho
A
A
CONDITIONS
V
I
V
V
LS421-3
LS424-6
S2
G2
G
DS
DS
DG
V/ C
mV
pA
pA
pA
nA
= 1 A
V
V
= 0
= 10V
= 10V
D2
V
T
V
V
V
V
T
V
T
I
I
V
I
V
DG
A
DG
DS
DG
DG
A
DS
A
G
D
D
D1
GS
DS
=-55 C to +125 C
= +125 C
= +125 C
= 1nA
= 0
= 30 A
BOTTOM VIEW
=10V
= 0V
= 10V
=10V
=10V
=10V
2
G1
= 0
= 10V
S1
3
1
TO-78
C
4
I
I
D
D
I
I
I
D
D
D
I
f= 1kHz
f= 1kHz
V
= 30 A
= 30 A
S
7
= 1nA
= 30 A
= 30 A
V
GS
G2
= 0
5
GS
S2
= 0
6
= 20V
D2
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LS423 Summary of contents
Page 1
... Drain to Source Voltage DSO -I Gate Forward Current G(f) Maximum Power Dissipation Device Dissipation @ Free Air - Total ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise noted) SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS | max. Drift vs. Temperature GS1 max. Offset Voltage GS1-2 GATE VOLTAGE ...
Page 2
SYMBOL CHARACTERISTICS OUTPUT CONDUCTANCE Y Full Conduction OSS Y Operating OS COMMON MODE REJECTION CMR -20 log | GS1-2 CMR -20 log | GS1-2 NOISE NF Figure e Voltage n CAPACITANCE C Input ISS ...