SST210 LINEAR [Linear Integrated Systems], SST210 Datasheet
SST210
Manufacturer Part Number
SST210
Description
N-CHANNEL LATERAL DMOS SWITCH
Manufacturer
LINEAR [Linear Integrated Systems]
Datasheet
1.SST210.pdf
(2 pages)
Linear Integrated Systems
Linear Integrated Systems
Product Summary
Features
• Ultra-High Speed Switching—
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
Absolute Maximum Ratings (T
Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V
Gate-Substrate Voltage ......................................................................... ± 30 V
Drain-Source Voltage
Source-Drain Voltage
Drain-Substrate Voltage
Part Number
SD210DE
SD214DE
SST210
SST214
r DS
SD210DE SD214DE
V (BR)DS Min(V)
@5 V
Top View
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
30
20
30
20
t ON
: 1 ns
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
V GS(th) Max (V)
1.5
1.5
1.5
1.5
Benefits
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
A
= 25
diode which results in lower gate leakage and ± voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Source-Substrate Voltage
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
Storage Temperature .................................................................... -65 to 150
Operating Junction Temperature ................................................. -55 to 125
Power Dissipation
Notes:
a. Derate 3 mW/
45 @ V GS = 10V
45 @ V GS = 10V
50 @ V GS = 10V
50 @ V GS = 10V
r DS(on) Max(Ω)
0
C Unless Otherwise Noted)
0
C above 25
a
....................................................................................................................................
N-CHANNEL LATERAL
SD-SST210/214
0
C
DMOS SWITCH
C rss Max (pF)
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
SST210 SST214
0.5
0.5
0.5
0.5
Top View
Applications
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
t ON Max (ns)
2
2
2
2
300 mW
0
0
0
C
C
C
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SST210 Summary of contents
Page 1
... N-CHANNEL LATERAL DMOS SWITCH C rss Max (pF Max (ns) 0.5 0.5 0.5 0.5 Applications • Fast Analog Switch • Fast Sample-and-Holds • Pixel-Rate Switching • DAC Deglitchers • High-Speed Driver Top View SST210 SST214 C Unless Otherwise Noted) 0 (SD210DE) ....................................... 15 V (SD214DE) ....................................... .................................................................................................................................... 0 C above ...
Page 2
Specifications Notes unless otherwise noted the body (substrate) and V (BR) c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems ...