T1110P6-SD-F VISHAY [Vishay Siliconix], T1110P6-SD-F Datasheet - Page 3

• Manufacturer Part Number: T1110P6-SD-F
• Description: Silicon PIN Photodiode
• Manufacturer: VISHAY [Vishay Siliconix]

Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
Document Number: 81122
Rev. 1.4, 23-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
MECHANICAL DIMENSIONS
PARAMETER
Length of chip edge (x-direction)
Length of chip edge (y-direction)
Sensitive area
Die height
Bond pad anode
ADDITIONAL INFORMATION (T
Frontside metallization, anode
Backside metallization, cathode
Dicing
Die bonding technology
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
12788
12787
Fig. 4 - Reverse Light Current vs. Reverse Voltage
1000
100
Fig. 3 - Reverse Light Current vs. Irradiance
100
0.1
10
10
1
1
0.01
0.1
λ
= 950 nm
E
e
V
- Irradiance (mW/cm
R
0.1
- Reverse Voltage (V)
1
0.05 mW/cm
1 mW/cm
0.2 mW/cm
0.1 mW/cm
0.5 mW/cm
For technical questions, contact:
10
1
2
λ = 950 nm
V
2
2
2
R
2
2
= 5 V
SYMBOL
)
amb
a x b
This datasheet is subject to change without notice.
A
L
L
H
x
y
S
= 25 °C, unless otherwise specified)
10
100
Silicon PIN Photodiode
MIN.
[e-mail]
94 8420
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
948407
Fig. 5 - Diode Capacitance vs. Reverse Voltage
2.74 x 2.74
0.2 x 0.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
TYP.
0
2.97
2.97
0.28
0.1
350
V
550
Epoxy bonding
R
Vishay Semiconductors
λ - Wavelength (nm)
- Reverse Voltage (V)
Aluminum
1
Sawing
NiV-Ag
f = 1 MHz
E = 0
750
MAX.
www.vishay.com/doc?91000
10
950
T1110P6
www.vishay.com
1150
100
UNIT
mm
mm
mm
mm
mm
2
2
3