MBR10100CT-E1 BCDSEMI [BCD Semiconductor Manufacturing Limited], MBR10100CT-E1 Datasheet - Page 4

• Manufacturer Part Number: MBR10100CT-E1
• Description: HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
• Manufacturer: BCDSEMI [BCD Semiconductor Manufacturing Limited]

Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
1/θ
Recommended Operating Conditions
Mar. 2011 Rev. 1. 3
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
(Rated V
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single Phase,
60Hz)
Operating Junction Temperature Range (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Parameter
Maximum Thermal Resistance
JA
.
R
R
) T
, Square Wave, 20kHz) T
C
=136°C
R
)
Symbol
C
=134°C
θ
θ
JA
JC
Junction to Case
Junction
Ambient
Condition
4
to
BCD Semiconductor Manufacturing Limited
TO-220-3 (2)
TO-220-3 (2)
TO-220F-3
TO-220F-3
TO-220-3/
TO-220-3/
Symbol
V
V
I
dv/dt
T
I
I
F(AV)
V
FRM
FSM
RWM
T
RRM
STG
R
J
Value
-55 to 150
MBR10100C
Value
> 8000
10000
> 400
100
100
150
10
3.0
4.5
60
60
5
Data Sheet
Unit
°C/W
°C/W
Unit
V/µs
D
°C
°C
V
A
A
A
V
V
/dT
J
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