MBR10100CT-E1 BCDSEMI [BCD Semiconductor Manufacturing Limited], MBR10100CT-E1 Datasheet - Page 6

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MBR10100CT-E1

Manufacturer Part Number
MBR10100CT-E1
Description
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Manufacturer
BCDSEMI [BCD Semiconductor Manufacturing Limited]
Datasheet
Typical Performance Characteristics
Mar. 2011 Rev. 1. 3
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
0.01
100
0.1
10
10
Figure 4. Typical Forward Voltage Per Diode
9
8
7
6
5
4
3
2
1
0
100
1
0.1
Figure 6. Average Forward Current vs.
105
Case Temperature (Per Diode)
T
0.2
J
=150
110
Instantaneous Forward Voltage (V)
0.3
o
C
115
Case Temperature (
0.4
120
125
0.5
130
T
J
0.6
=25
135
o
C)
o
T
C
J
0.7
=125
140
o
C
0.8
145
150
0.9
155
1.0
6
10000
1000
1E-3
0.01
100
0.1
10
1
Figure 5. Typical Reverse Current Per Diode
0
Percent of Rated Peak Reverse Voltage (%)
BCD Semiconductor Manufacturing Limited
20
40
T
J
=150
T
MBR10100C
J
T
=125
60
J
=25
o
C
Data Sheet
o
o
C
C
80
100

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