MURB1660CT_06 ONSEMI [ON Semiconductor], MURB1660CT_06 Datasheet
MURB1660CT_06
Manufacturer Part Number
MURB1660CT_06
Description
ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MURB1660CT_06.pdf
(4 pages)
MURB1660CT
SWITCHMODEt
Power Rectifier
D
power supplies, inverters, and as free wheeling diodes.
Features
•
•
•
•
•
•
•
•
•
•
Mechanical Characteristics:
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 7
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
(Rated V
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction and Storage Temperature
Range
These state−of−the−art devices are designed for use in switching
2
Leads are Readily Solderable
260°C Max. for 10 Seconds
Package Designed for Power Surface Mount Applications
Ultrafast 60 Nanosecond Recovery Times
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature
Short Heat Sink Tab Manufactured − Not Sheared!
Similar in Size to Industrial Standard TO−220 Package
Pb−Free Packages are Available
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead and Mounting Surface Temperature for Soldering Purposes:
Device Meets MSL1 Requirements
ESD Ratings:
PAK Power Surface Mount Package
R
R
, T
, Square Wave, 20 kHz, T
C
= 150°C) Total Device
Rating
Machine Model, C >400 V
Human Body Model, 3B >8000 V
(Per Leg)
Preferred Device
C
= 150°C)
Symbol
T
V
V
I
I
J
F(AV)
RWM
I
FSM
RRM
V
, T
FM
R
stg
−65 to
Value
+175
600
100
8.0
16
16
1
Unit
°C
V
A
A
A
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MURB1660CT
MURB1660CTG
MURB1660CTT4
MURB1660CTT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
16 AMPERES, 600 VOLTS
ULTRAFAST RECTIFIER
CASE 418B
A
Y
WW
U1660 = Specific Device Code
G
AKA
ORDERING INFORMATION
STYLE 3
D
2
MARKING DIAGRAM
PAK
http://onsemi.com
1
3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
(Pb−Free)
(Pb−Free)
U1660G
Package
AY WW
D
D
D
D
AKA
2
2
2
2
Publication Order Number:
PAK
PAK
PAK
PAK
1
3
800/Tape & Reel
800/Tape & Reel
MURB1660CT/D
4
50 Units/Rail
50 Units/Rail
Shipping†
4
Related parts for MURB1660CT_06
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
SWITCHMODE Power Rectifier
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Trench Power MOSFET -20 V, Single P-Channel, SOT-23
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 12 A, 60 V
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 3.0 Amps 60 Volts N−Channel
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 2.0 A, 60 V, Logic Level
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
N-Channel Enhancement−Mode D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
Part Number:
Description:
60 V, 60 A, N-Channel TO-220 and D2PAK
Manufacturer:
ONSEMI [ON Semiconductor]
Datasheet:
MURB1660CT_06 Summary of contents
Page 1
MURB1660CT Preferred Device SWITCHMODEt Power Rectifier 2 D PAK Power Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters, and as free wheeling diodes. Features • Package Designed for Power Surface Mount Applications • ...
Page 2
THERMAL CHARACTERISTICS (Per Leg) Rating Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient (Note 1) Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 8.0 Amp ...
Page 3
D = 0.5 0.5 0.2 0.1 0.1 0.05 0.01 0.05 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 0 300 100 MURB1660CT P (pk Duty Cycle ...
Page 4
−T− SEATING PLANE 0.13 (0.005) M VARIABLE CONFIGURATION ZONE VIEW W−W 1 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and ...