L6100200 SEMIKRON [Semikron International], L6100200 Datasheet - Page 13
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L6100200
Manufacturer Part Number
L6100200
Description
SKYPER 32PRO
Manufacturer
SEMIKRON [Semikron International]
Datasheet
1.L6100200.pdf
(16 pages)
SKYPER™ 32PRO -
Gate resistors
The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to
external terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external
resistors R
and discharged, both resistors will dictate what time must be taken to do this. The final value of the resistance is
difficult to predict, because it depends on many parameters as DC link voltage, stray inductance of the circuit,
switching frequency and type of IGBT.
Soft Turn-Off (STO)
In case of short circuit, the STO circuit increases the resistance in series with R
speed. This produces smaller voltage spike above the collector emitter of the IGBT by reducing the di/dt value.
Because in short-circuit conditions the IGBT's peak current increases and some stray inductance is always
present in power circuits, it must fall to zero in a longer time than at normal operation. The soft turn-off time can
be adjusted by connection an external resistor R
13 / 16
Connection R
Connection R
Please note:
Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON
with SEC_BOT_IGBT_OFF, respectively.
Please note:
The soft turn-off function is no complete protection from induced over voltage in the event of short-circuit turn-off.
SEC_TOP_IGBT_ON
SEC_TOP_IGBT_OFF
SEC_TOP_GND
SEC_TOP_GND
SEC_BOT_IGBT_ON
SEC_BOT_IGBT_OFF
SEC_BOT_GND
SEC_BOT_GND
Gon
and R
Gon
Goff_SC
, R
Goff
Goff
. As an IGBT has input capacitance (varying during switching time) which must be charged
User Side
R
R
R
R
Gon
Goff
Gon
Goff
R
10K
R
10K
GE
GE
Technical Explanations
2005-06-03 – Rev02
TOP
BOT
Load
Goff_SC
.
Application Hints
The gate resistor influences the switching time, switching
losses, dv/dt behaviour, etc. and has to be selected very
carefully. Due to this influence a general value for the gate
resistors cannot be recommended. The gate resistor has to
be optimized according to switching behaviour and over
voltage peaks within the specific circuitry.
By increasing R
reverse peak current of the free-wheeling diode will
diminish.
By increasing R
decrease. The inductive peak over voltage during turn-off
will diminish.
In order to ensure locking of the IGBT even when the driver
supply voltage is turned off, a resistance (R
integrated.
Application Hints
The turn-off behaviour and over voltage peaks depends on
DC link voltage, stray inductance of the power circuits, type
of IGBT, etc. and has to be selected according the specific
application. Due to this influence a general value for R
cannot be recommended. The resistor has to be selected
according to the behaviour of the specific circuitry.
The soft turn-off time is limited to 10µs. After this time the
output stage turn-off with used R
Gon
Goff
the turn-on speed will decrease. The
the turn-off speed of the IGBT will
Goff
and turns-off the IGBT at lower
Goff
.
© by SEMIKRON
GE
) has to be
Goff_SC