LMBF170LT1G LRC [Leshan Radio Company], LMBF170LT1G Datasheet - Page 2

• Manufacturer Part Number: LMBF170LT1G
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: LRC [Leshan Radio Company]

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Drain–Source Breakdown Voltage (V GS = 0, I D = 100 mA)
Gate–Body Leakage Current, Forward (V GSF = 15 Vdc, V DS = 0)
Gate Threshold Voltage (V DS = V GS , I D = 1.0 mA)
Static Drain–Source On–Resistance (V GS = 10 Vdc, I D = 200 mA)
On–State Drain Current (V DS = 25 Vdc, V GS = 0)
Input Capacitance
Turn–On Delay Time
Turn–Off Delay Time
(V DS = 10 Vdc, V GS = 0 V, f = 1.0 MHz)
W
Figure 1. Switching Test Circuit
W
(Note 2.)
(V DD = 25 Vdc, I D = 500 mA, R gen = 50 W)
(V DD
Characteristic
W
W
25 Vdc, I D
(Note 2.)
(T a = 25°C unless otherwise noted)
Figure 1
500 mA, R gen
W
W
50 W)
LESHAN RADIO COMPANY, LTD.
V (BR)DSS
Symbol
V GS(th)
r DS(on)
I D(off)
t d(on)
t d(off)
I GSS
C iss
Figure 2. Switching Waveform
Min
0.8
60
–
–
–
–
–
–
LMBF170LT1
Max
3.0
5.0
0.5
10
60
10
10
–
LMBF170LT1–2/4
nAdc
Unit
Vdc
Vdc
mA
pF
ns
W