1N50 UTC [Unisonic Technologies], 1N50 Datasheet - Page 2

• Manufacturer Part Number: 1N50
• Description: 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

1N50
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Current (Note 3)
Avalanche Energy
Power Dissipation
Junction Temperature
Storage Temperature
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 120mH, I
5. I
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SD
≤ 1.5A, di/dt ≤ 200A/µs, V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
AS
= 1.3A, V
Continuous (T
Pulsed (Note 3)
Single Pulsed (Note 4)
Repetitive (Note 5)
T
Derate above 25°C
C
=25°C
DD
= 50V, R
DD
C
≤ BV
=25°C)
G
DSS
Preliminary
= 27Ω, Starting T
, Starting T
(T
C
=25°C, unless otherwise specified)
SYMBOL
SYMBOL
J
= 25°C
V
V
T
E
E
I
I
P
T
θ
θ
I
STG
DSS
GSS
DM
AR
AR
D
AS
JC
D
JA
J
J
= 25°C
1.3 (Note 2)
RATINGS
5 (Note 2)
-55~+150
RATINGS
+150
0.32
500
±30
113
62.5
3.13
1.3
2.6
40
Power MOSFET
QW-R502-548.a
W/°C
UNIT
UNIT
°C/W
°C/W
mJ
mJ
°C
°C
W
V
V
A
A
A
2 of 6