1N50 UTC [Unisonic Technologies], 1N50 Datasheet - Page 3

• Manufacturer Part Number: 1N50
• Description: 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

1N50
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
7. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
Forward
Reverse
Preliminary
SYMBOL
R
V
BV
t
t
C
C
D(OFF)
I
C
Q
Q
Q
I
GS(TH)
DS(ON)
D(ON)
V
Q
I
t
DSS
GSS
OSS
t
I
SM
RSS
t
RR
ISS
GS
GD
R
SD
F
S
RR
DSS
(T
G
C
=25°C, unless otherwise noted)
I
V
V
V
V
V
V
V
(Note 6, 7)
V
(Note 6, 7)
I
I
(Note 6)
D
S
S
DS
GS
GS
DS
GS
GS
GS
DD
=1.3A, V
=1.5A, V
=250µA, V
=500V, V
=V
=+30V, V
=-30V, V
=10V, I
=0V, V
=10V, V
=250V, I
GS
TEST CONDITIONS
, I
GS
GS
D
DS
D
=250µA
DS
=0.65A
D
GS
DS
=0V
=0V, dI
=25V, f=1.0MHz
GS
DS
=1.5A, R
=400V, I
=0V
=0V
=0V
=0V
F
/dt=100A/µs
G
D
=25Ω
=1.5A
Power MOSFET
MIN TYP MAX UNIT
500
2.0
0.54
220
162
1.6
5.5
30
11
11
12
13
42
15
QW-R502-548.a
+100 nA
-100
1.15
290
4.0
5.5
1.3
35
13
16
35
35
90
40
1
5
3 of 6
µA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
A
V