MMBFJ175LT1_06 ONSEMI [ON Semiconductor], MMBFJ175LT1_06 Datasheet

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MMBFJ175LT1_06

Manufacturer Part Number
MMBFJ175LT1_06
Description
JFET Chopper P-Channel - Depletion
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
MMBFJ175LT1
JFET Chopper
P−Channel − Depletion
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Drain−Gate Voltage
Reverse Gate−Source Voltage
Total Device Dissipation FR−5 Board,
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Gate −Source Breakdown Voltage
Gate Reverse Current
Gate −Source Cutoff Voltage
Zero Gate−Voltage Drain Current (Note 2)
Drain Cutoff Current
Drain Source On Resistance
Input Capacitance
Reverse Transfer
Capacitance
Pb−Free Package is Available
(V
(V
(V
(V
(V
(I
(Note 1) T
Derate above 25°C
D
DS
DS
DS
GS
DS
= 500 mA)
= 0, I
= 0 V, V
= 15, I
= 0, V
= 15 V, V
Characteristic
Characteristic
D
A
DS
D
= 1.0 mA)
= 25°C
Rating
GS
= 10 nA)
= 15 V)
GS
= 20 V)
V
= 10 V)
DS
f = 1.0 MHz
= 0, V
Preferred Device
GS
= 10V
(T
A
V
V
Symbol
= 25°C unless otherwise noted)
Symbol
Symbol
r
T
(BR)GSS
GS(OFF)
I
V
DS(on)
I
I
C
R
D(off)
C
J
V
GSS
DSS
GS(r)
P
, T
rss
qJA
iss
DG
D
stg
−55 to +150
Min
3.0
7.0
30
Value
Max
−25
225
556
1.8
25
Max
125
1.0
6.0
1.0
5.5
60
11
1
mW/°C
°C/W
Unit
Unit
Unit
mW
mA
nA
nA
pF
°C
W
V
V
V
V
†For information on tape and reel specifications,
MMBFJ175LT1
MMBFJ175LT1G
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
1
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
2
ORDERING INFORMATION
GATE
6W
M
G
MARKING DIAGRAM
3
http://onsemi.com
3
1
= Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
Package
SOT−23
SOT−23
6W M G
Publication Order Number:
G
SOT−23 (TO−236)
1 DRAIN
2 SOURCE
CASE 318
STYLE 10
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBFJ175LT1/D
Shipping

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MMBFJ175LT1_06 Summary of contents

Page 1

MMBFJ175LT1 Preferred Device JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 25°C A Derate above 25°C Thermal ...

Page 2

D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...

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