BAS16-V_12 VISHAY [Vishay Siliconix], BAS16-V_12 Datasheet - Page 2

• Manufacturer Part Number: BAS16-V_12
• Description: Small Signal Fast Switching Diode
• Manufacturer: VISHAY [Vishay Siliconix]

BAS16-V
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Junction ambient
Junction and storage
temperature range
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
14356
1000
Figure 1. Forward Current vs. Forward Voltage
0.01
100
0.1
10
Parameter
Parameter
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
= 100 °C
V
F
[e-mail], [e-mail],
- Forward Voltage (V)
For technical questions within your region, please contact one of the following:
25 °C
8 mm x 10 mm x 0.7 mm
I
F
V
V
V
On ceramic substrate
= 10 mA to I
R
R
R
V
= 75 V, T
= 25 V, T
= 6 V, R
R
Test condition
Test condition
I
I
I
F
= 0, f = 1 MHz
V
I
F
F
F
= 150 mA
R
= 10 mA
= 50 mA
= 1 mA
= 75 V
L
j
j
= 150 °C
= 150 °C
R
= 100 Ω
= 1 mA,
Symbol
C
V
V
V
V
I
I
I
t
R
R
R
rr
F
F
F
F
D
T
Symbol
j
R
14357
Figure 2. Reverse Current vs. Junction Temperature
= T
thJA
10000
1000
stg
100
10
1
[e-mail]
0
Min.
V
25
R
= 20 V
T
j
50
– Junction Temperature (°C)
- 55 to + 150
75 100 125 150 175 200
Value
Typ.
357
Document Number 85539
Max.
1.25
715
855
50
30
1
1
4
6
Rev. 1.6, 12-Aug-10
K/W
Unit
°C
Unit
mV
mV
µA
µA
µA
pF
ns
V
V