MMBT2132T3_06 ONSEMI [ON Semiconductor], MMBT2132T3_06 Datasheet - Page 2

• Manufacturer Part Number: MMBT2132T3_06
• Description: General Purpose Transistors NPN Bipolar Junction Transistor
• Manufacturer: ONSEMI [ON Semiconductor]

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Base Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Emitter−Base Breakdown Voltage
1000
100
0.3
0.2
0.1
0
0.000001
0.01
I
C
= 1.0 mA
Figure 1. Collector Saturation Region
0.00001
I
C
Figure 3. DC Current Gain
, COLLECTOR CURRENT (A)
10 mA
I
B
, BASE CURRENT (A)
0.0001
Characteristic
(V
0.1
0.1 A
CB
−40°C
150°C
25°C
0.001
(T
= 25 Vdc, I
C
(V
(I
(I
(I
(I
C
= 25°C unless otherwise noted)
CE
C
C
C
= 700 mAdc, V
= 500 mAdc, I
= 700 mAdc, I
= 700 mAdc, I
(V
(V
0.5 A
= 3.0 Vdc, I
EB
CB
E
0.01
V
= 5.0 Vdc, I
CE
= 25 Vdc, I
= 0 Adc, T
= 3.0 V
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MMBT2132T3
(I
(I
(I
0.7 A
C
C
E
C
B
B
B
CE
= 100 mAdc)
= 100 mAdc)
= 100 mAdc)
= 10 mAdc)
= 50 mAdc)
= 70 mAdc)
= 70 mAdc)
A
1.0
E
C
= 1.0 Vdc)
0.1
= 125°C)
= 0 Adc)
= 0 Adc)
2
0.001
0.01
1.0
0.1
0.1
0
0.000001
0.001
V
V
V
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
CE(sat)
I
BE(sat)
BE(on)
CBO
h
EBO
Figure 2. Collector Saturation Region
FE
I
C
0.00001
= 1.0 mA
I
C
Figure 4. “ON” Voltages
, COLLECTOR CURRENT (A)
I
B
0.01
, BASE CURRENT (A)
10 mA
Min
150
5.0
0.0001
40
30
−
−
−
−
−
−
−
V
V
BE(sat)
CE(sat)
Typ
−
−
−
−
−
−
−
−
−
−
−
0.001
0.1 A
0.1
Max
0.25
1.0
0.4
1.1
1.0
10
10
−
−
−
−
0.01
I
C
/I
B
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
= 10
0.1
1.0