BAS21AHT1D ONSEMI [ON Semiconductor], BAS21AHT1D Datasheet - Page 2

• Manufacturer Part Number: BAS21AHT1D
• Description: Low Leakage Switching Diode
• Manufacturer: ONSEMI [ON Semiconductor]

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
+10 V
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance
Reverse Recovery Time
1200
1000
800
600
400
200
(V
(V
(I
(I
(I
(V
(I
50 Ω OUTPUT
GENERATOR
BR
F
F
F
1
R
R
R
= 100 mAdc)
= 200 mAdc)
= I
PULSE
1
= 200 Vdc)
= 200 Vdc, T
= 0, f = 1.0 MHz)
= 100 mAdc)
R
820 Ω
= 30 mAdc, R
0.1 mF
J
2.0 k
Figure 2. Forward Voltage
100 mH
= 150C)
FORWARD CURRENT (mA)
L
Characteristic
10
= 100 Ω)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
D.U.T.
T
2. Input pulse is adjusted so I
3. t
A
Figure 1. Recovery Time Equivalent Test Circuit
= --55C
p
(T
» t
A
100
rr
= 25C unless otherwise noted)
0.1 mF
OSCILLOSCOPE
155C
50 Ω INPUT
SAMPLING
25C
http://onsemi.com
1000
R(peak)
2
V
R
7000
6000
5000
4000
3000
Symbol
V
t
is equal to 30 mA.
r
6
5
4
3
2
1
0
C
V
(BR)
INPUT SIGNAL
I
t
R
rr
1
D
F
10%
90%
t
p
2
Figure 3. Reverse Leakage
t
Min
250
--
--
--
--
--
--
5
REVERSE VOLTAGE (V)
F
10
) of 30 mA.
I
I
T
R
T
F
T
A
A
A
Typ
= 155C
= --55C
= 25C
50
20
--
--
--
--
--
--
(I
F
= I
at i
R
OUTPUT PULSE
50
= 30 mA; MEASURED
R(REC)
t
1000
1250
rr
Max
100
5.0
40
--
--
i
R(REC)
= 3.0 mA)
100
= 3.0 mA
200
nAdc
mAdc
Unit
t
Vdc
mV
pF
ns
300