MMBT918LT1G_09 ONSEMI [ON Semiconductor], MMBT918LT1G_09 Datasheet
MMBT918LT1G_09
Manufacturer Part Number
MMBT918LT1G_09
Description
VHF/UHF Transistor NPN Silicon
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MMBT918LT1G_09.pdf
(3 pages)
MMBT918LT1G
VHF/UHF Transistor
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
225
556
300
417
3.0
1.8
2.4
15
30
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT918LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
M3B = Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
SOT−23 (TO−236)
1
1
(Pb−Free)
= Date Code*
= Pb−Free Package
Package
SOT−23
CASE 318
COLLECTOR
STYLE 6
M3B M G
EMITTER
2
G
Publication Order Number:
3
2
3
3000 / Tape & Reel
MMBT918LT1/D
Shipping
†
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MMBT918LT1G_09 Summary of contents
Page 1
MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 3.0 mAdc Collector −Base Breakdown Voltage (I = 1.0 mAdc Emitter −Base Breakdown Voltage ( mAdc, I ...
Page 3
D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...