DF25208 DYNEX [Dynex Semiconductor], DF25208 Datasheet

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DF25208

Manufacturer Part Number
DF25208
Description
Fast Recovery Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
Replaces March 1998 version, DS4142-3.4
APPLICATIONS
FEATURES
VOLTAGE RATINGS
CURRENT RATINGS
DF252 16
DF252 14
DF252 12
DF252 10
DF252 08
DF252 06
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
Double Side Cooling
High Surge Capability
Low Recovery Charge
I
I
I
I
F(RMS)
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
1600
1400
1200
1000
V
800
600
V
RRM
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
Half wave resistive load, T
T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M771.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
Advance Information
KEY PARAMETERS
DS4142-4.0 January 2000
V
I
I
Q
t
F(AV)
FSM
rr
RRM
r
Max.
560
500
435
375
360
276
DF252
DF252
3000A
1600V
Units
3.2 s
360A
35 C
A
A
A
A
A
A
1/8

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DF25208 Summary of contents

Page 1

Replaces March 1998 version, DS4142-3.4 APPLICATIONS Induction Heating A.C. Motor Drives Inverters And Choppers Welding High Frequency Rectification UPS FEATURES Double Side Cooling High Surge Capability Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage V RRM V ...

Page 2

DF252 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Symbol Parameter R ...

Page 3

CHARACTERISTICS Symbol Parameter V Forward voltage FM I Peak reverse current RRM t Reverse recovery time rr Q Recovered charge (50% chord) RA1 I Reverse recovery current RM K Soft factor V Threshold voltage TO r Slope resistance T V ...

Page 4

DF252 CURVES 3000 2500 2000 1500 1000 500 1.0 500 400 300 200 100 0 1.0 4/8 Measured under pulse conditions T = 25˚ 150˚C j 2.0 3.0 Instantaneous forward voltage V Fig.1 Maximum (limit) forward characteristics ...

Page 5

1ms p dI /dt R 1000 I 100 Rate of rise of reverse current dI Fig.3 Recovered charge 1000 Conditions 150˚ 100V R 100 ...

Page 6

DF252 0.1 0.01 0.001 0.01 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. ...

Page 7

ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Recommendations for clamping power semiconductors Thyristor and diode measurement with a multi-meter Use on-state characteristic TO T POWER ASSEMBLY CAPABILITY The Power Assembly group was set ...

Page 8

... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...

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