DF45106 DYNEX [Dynex Semiconductor], DF45106 Datasheet

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DF45106

Manufacturer Part Number
DF45106
Description
Fast Recovery Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
Replaces March 1999 version, DS4142-4.0
FEATURES
Applications
Voltage Ratings
CURRENT RATINGS
DF451 16
DF451 14
DF451 12
DF451 10
DF451 08
DF451 06
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Double Side Cooling
High Surge Capability
Low Recovery Charge
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
I
I
I
I
F(RMS)
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
1600
1400
1200
1000
V
800
600
V
RRM
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
Half wave resistive load, T
T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M771.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
KEY PARAMETERS
DS4143-5.0 January 2000
V
I
I
Q
t
F(AV)
FSM
rr
RRM
r
Max.
543
391
348
285
295
220
DF451
DF451
1.22 s
3500A
1600V
Units
295A
25 C
A
A
A
A
A
A
1/8

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DF45106 Summary of contents

Page 1

Replaces March 1999 version, DS4142-4.0 FEATURES Double Side Cooling High Surge Capability Low Recovery Charge Applications Induction Heating A.C. Motor Drives Inverters And Choppers Welding High Frequency Rectification UPS Voltage Ratings Type Number Repetitive Peak Reverse Voltage V RRM V ...

Page 2

DF451 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Symbol Parameter R ...

Page 3

DEFINITION OF K FACTOR AND Q CURVES 3000 2500 2000 1500 1000 500 2.0 RA1 Q = 0.5x I RA1 Measured under ...

Page 4

DF451 500 400 300 200 100 0 1.25 4/8 Measured under pulse conditions T = 150˚ 1.5 1.75 Instantaneous forward voltage, V Fig.2 Maximum (limit) forward characteristics = 25˚C 2.0 2.25 - (V) F ...

Page 5

1ms p dI /dt R 100 Rate of rise of reverse current, dI Fig.3 Recovered charge 1000 100 Rate ...

Page 6

DF451 0.1 0.01 0.001 0.01 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. ...

Page 7

ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Recommendations for clamping power semiconductors Thyristor and diode measurement with a multi-meter Use on-state characteristic TO T POWER ASSEMBLY CAPABILITY The Power Assembly group was set ...

Page 8

... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...

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