IDT70V65 IDT [Integrated Device Technology], IDT70V65 Datasheet - Page 8

• Manufacturer Part Number: IDT70V65
• Description: HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
• Manufacturer: IDT [Integrated Device Technology]

Capacitance
(T
NOTES:
1. These parameters are determined by device characterization, but are not
2. C
Absolute Maximum Ratings
Recommended DC Operating
Conditions with V
NOTES:
1. V
2. V
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
V
(V
T
T
T
I
I
OUT
OUT
BIAS
STG
JN
Symbol
Symbol
TERM
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
DD
A
C
V
production tested.
V
V
OPT pin for that port must be set to V
supplied as indicated above.
(For V
(For V
V
V
V
C
)
DDQ
OUT
OUT
(3)
DD
SS
IL >
TERM
IH
IH
IL
= +25°C, F = 1.0MH
IN
(2)
Symbol
(2)
-1.5V for pulse width less than 10 ns.
also references C
DDQ
DDQ
must not exceed V
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage
(Address & Control Inputs)
Input High Voltage - I/O
Input Low Voltage
Input Capacitance
Output Capacitance
= 3.3V) DC Output Current
= 2.5V) DC Output Current
Parameter
Parameter
Storage Temperature
Junction Temperature
V
with Respect to GND
Temperature Under Bias
DD
I/O
Terminal Voltage
(1)
.
DDQ
(3)
(3)
+ 100mV.
Rating
(3)
Z
DDQ
) PQFP ONLY
-0.5
SS
Min.
3.15
2.4
1.7
1.7
0
(0V), and V
(1)
Conditions
V
V
Typ.
OUT
at 2.5V
3.3
2.5
____
____
____
IN
0
= 0V
= 0V
DDQX
V
V
-0.5 to + 4.6
DDQ
DDQ
Commercial
& Industrial
-55 to +125
-65 to +150
for that port must be
(1)
+ 100mV
+ 100mV
Max.
3.45
+150
2.6
0.7
50
40
0
Max.
10.5
8
(2)
(2)
4869 tbl 08
4869 tbl 06
Unit
Unit
pF
pF
V
V
V
V
V
V
4869 tbl 05
Unit
mA
mA
o
o
o
V
C
C
C
8
Recommended DC Operating
Conditions with V
NOTES:
1. V
2. V
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
Maximum Operating
Temperature and Supply Voltage
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Commercial
Industrial
Symbol
V
V
V
V
V
V
OPT pin for that port must be set to V
supplied as indicated above.
DDQ
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. V
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
DD
SS
IH
IH
IL
IL >
TERM
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
or 4ns maximum, and is limited to < 20mA for the period of V
+ 150mV.
-1.5V for pulse width less than 10 ns.
Grade
TERM
must not exceed V
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage
(Address & Control Inputs)
Input High Voltage - I/O
Input Low Voltage
must not exceed V
Parameter
Industrial and Commercial Temperature Ranges
-40
DDQ
Temperature
0
(3)
O
O
Ambient
C to +70
C to +85
DD
(3)
+ 150mV.
+ 150mV for more than 25% of the cycle time
(3)
DDQ
DD
O
-0.3
O
C
Min.
3.15
3.15
(3.3V), and V
2.0
2.0
C
0
(1)
at 3.3V
Typ.
3.3
3.3
____
____
____
GND
0
0V
0V
DDQX
V
V
DDQ
DDQ
for that port must be
3.3V
3.3V
+ 150mV
+ 150mV
Max.
3.45
3.45
0.8
0
+
+
V
DD
TERM
150mV
150mV
(2)
(2)
4869 tbl 04
4869 tbl 07
(1)
> V
Unit
V
V
V
V
V
V
DD