qm50hy-2h Mitsumi Electronics, Corp., qm50hy-2h Datasheet - Page 4

• Manufacturer Part Number: qm50hy-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
3
2
7
5
4
3
2
7
5
4
3
10
FORWARD BIAS SAFE OPERATING AREA
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
0
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
TRANSIENT THERMAL IMPEDANCE
–1
0
–3
BASE REVERSE CURRENT –I
0
V
I
I
CHARACTERISTIC (TRANSISTOR)
B1
C
2
2
2
CC
=50A
SWITCHING TIME VS. BASE
=1A
2
3
3
3
=600V
4
4
4
T
T
j
j
3 4 5 7
5
5
5
=25°C
=125°C
CURRENT (TYPICAL)
7
7
7
t
t
s
f
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
DC
T
NON-REPETITIVE
4
4
4
0
C
5
5
5
=25°C
7
7
7
10
2 3 4 5 7
10
–1
2
1ms
2
2
3
3
B2
4
4
50µs
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
0.4
COLLECTOR-EMITTER VOLTAGE V
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
200
0.8
COLLECTOR
DISSIPATION
40
60
400
1.2
–V
CEO
80
I
600
1.6
(V)
B2
100 120
=–3A
SECOND
BREAKDOWN
AREA
QM50HY-2H
T
T
800
C
2.0
I
j
j
=25°C
=125°C
B2
INSULATED TYPE
( C)
140
=–1A
CE
1000
160
2.4
(V)
Feb.1999