STB80NF55-08_08 STMICROELECTRONICS [STMicroelectronics], STB80NF55-08_08 Datasheet - Page 4

• Manufacturer Part Number: STB80NF55-08_08
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 14)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
= 250 µA, V
= 0
= 27 V, I
= 25 V, f = 1 MHz,
=10 V
=15 V , I
= max rating
= max rating@125 °C
= ±20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
, I
D
D
D
D
= 80 A
GS
= 250 µA
= 18 A
= 40 A
= 0
Min.
Min.
55
2
0.0065 0.008
3740
Typ.
Typ.
830
265
112
40
20
40
3
Max.
Max.
±100
155
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω