mbn1200h45e2 CT-Concept Technologie AG, mbn1200h45e2 Datasheet
mbn1200h45e2
Related parts for mbn1200h45e2
mbn1200h45e2 Summary of contents
Page 1
... E - 4.2 6.3 off(10 4.8 off(full 3.2 4.8 rr(10 3.5 rr(full) value after the measurement of switching G Spec.No.IGBT-SP-08007 R3 P Target Specification Unit in mm MBN1200H45E2 4,500 ±20 o 1,200 (Tc=80 C) 2,400 1,200 2,400 -40 ~ +125 -50 ~ +125 8,400 (AC 1 minute) 2/10 (1) 6 (2) Test Conditions o V =4,500V, V =0V, Tj= =4,500V, V ...
Page 2
... IGBT MODULE MBN1200H45E2 THERMAL CHARACTERISTICS Item IGBT Thermal Impedance FWD Contact Thermal Impedance DEFINITION OF TEST CIRCUIT Vce 90% 10% 10 ton Eon(10%)= ∫ ・ Eon(Full) = ∫ ・ Symbol Unit Min. Typ. ...
Page 3
... IGBT MODULE MBN1200H45E2 STATIC CHARACTERISTICS 2000 VGE=15V 25 ℃ ℃ ℃ ℃ 1500 1000 500 Collector-Emitter Voltage Vce[V] Collector Current vs. Collector to Emitter Voltage DYNAMIC CHARACTERISTICS 、 、 、 、 3 、 、 、 、 500 Collector Current Ic (A) or Forward Current, IF(A) Loss vs ...
Page 4
... IGBT MODULE MBN1200H45E2 TRANSIENT THERMAL IMPEDANCE 0.1 0.01 0.001 0.0001 0.001 Transient Thermal Impedance Curve Negative environmental impact material Please note that following materials are contained in the product In order to keep characteristics and reliability level. Material Lead (Pb) and its compounds Arsenic and its compounds ...
Page 5
... IGBT MODULE MBN1200H45E2 HITACHI POWER SEMICONDUCTORS 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use ...