mgf0840g Mitsumi Electronics, Corp., mgf0840g Datasheet
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Manufacturer Part Number
mgf0840g
Description
Mitsubishi Semiconductors < Gan Hemt > Mgf0840g 10 W Gan Hemt [ Non-matched ]
Manufacturer
Mitsumi Electronics, Corp.
Available stocks
CSTG-XXXXX
DESCRIPTION
The MGF0840G, GaN HEMT with an N-channel schottky
Gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
High voltage operation : VDS = 47 V
High output power : Po = 40.0 dBm (typ.) @ P3dB
High efficiency : d = 60 % (typ.) @ P3dB
Designed for use in Class AB linear amplifiers
APPLICATIONS
MMDS/UMTS/WiMAX
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds = 47 V Ids = 90 mA Rg = 120
Packaging
Absolute maximum ratings
Electrical characteristics
V
P3dB
d
G
Rth(ch-c)
Symbol
Symbol
V
V
P
I
I
Tch
Tstg
GR
GF
GS(off)
*2 : Channel to case
Specifications are subject to change without notice.
LP *1
DS
GS
T
Drain to Source Voltage
Gate to Source Voltage
Total power dissipation
Reverse gate current
Forward gate current
Channel temperature
Storage temperature
voltage
3dB gain compression power
Gate to source cut-off
Drain efficiency
Linear power gain
Thermal resistance *2
4 inch Tray ( 25 pcs)
Parameter
Parameter
( Ta = 25 C)
(Ta = 25 C)
V
V
*1 : Pin=20dBm
Vf Method
- 65 to +175
f = 2.6 GHz
DS
DS
Ratings
- 1.5
+ 30
120
- 10
230
= 47 V, I
= 47 V, I
21
Test conditions
DS
DQ
= 3 mA
= 90 mA,
1
Unit
mA
mA
C
C
W
V
V
OUTLINE DRAW ING
10 W GaN HEMT
GF-7
②
φ2.2
Mitsubishi Semiconductors < GaN HEMT >
39.0
13.0
Min.
-1.0
–
–
9.0±0.2
Limits
5.0
14.0
①
Typ.
40.0
14.0
③
6.8
60
-
Unit : m illim eters
0.6±0.2
MGF0840G
[ non-matched ]
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Max.
-5.0
9.7
–
–
–
Nov. / 2010
②
C/W
dBm
Unit
dB
%
V
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mgf0840g Summary of contents
... DESCRIPTION The MGF0840G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES High voltage operation : VDS = 47 V High output power : Po = 40.0 dBm (typ.) @ P3dB High efficiency : (typ.) @ P3dB Designed for use in Class AB linear amplifiers APPLICATIONS ...
... Example of Circuit Schematic and Characteristics : f = 2.6 GHz 0.4 0.2 0.0 Example of circuit CSTG-XXXXX 50 f=2.6GHz 45 VD=47V IDQ=90mA 40 Ta=25deg Pin(dBm) 2 Mitsubishi Semiconductors < GaN HEMT > MGF0840G 10 W GaN HEMT [ non-matched ] 100 Effi Nov. / 2010 ...
... Mitsubishi Semiconductors < GaN HEMT > MGF0840G [ non-matched ] S12 S22 (ang) (mag) (ang) -6.7 0.446 -102.7 0.3 0.389 -120.9 4.0 0.356 -129.0 -1.3 0.379 -130.1 -10.8 0.389 -137.9 -18.1 0.407 -143.8 -22.6 0.379 -144 ...
... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. CSTG-XXXXX Mitsubishi Semiconductors < GaN HEMT > GaN HEMT 4 MGF0840G [ non-matched ] Nov. / 2010 ...
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