BA783S-V VISHAY [Vishay Siliconix], BA783S-V Datasheet - Page 2

• Manufacturer Part Number: BA783S-V
• Description: Band Switching Diodes
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 85709
Rev. 1.6, 05-Aug-10
BA782S-V, BA783S-V
Vishay Semiconductors
TYPICAL CHARACTERISTICS T
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
18798
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
Fig. 1 - Diode Capacitance
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
V
R
- Reverse Voltage (V)
1
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
Cathode bar
0.25 (0.010)
0.40 (0.016)
T
f = 1 MHz
10
j
= 25 °C
amb
100
= 25 °C, unless otherwise specified
Band Switching Diodes
2.85 (0.112)
2.50 (0.098)
1.95 (0.077)
1.60 (0.063)
Foot print recommendation:
0.6 (0.024)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
1.6 (0.063)
20330
[e-mail]
0.1
10
1
1
T
amb
BA782S-V
100 MHz
= 25 °C
I
F
- Forward Current (mA)
BA783S-V
100 MHz
BA782S-V, BA783S-V
10
0.6 (0.024)
1 kHz
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100
2