TD74BC541P TOSHIBA [Toshiba Semiconductor], TD74BC541P Datasheet - Page 3

• Manufacturer Part Number: TD74BC541P
• Description: TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Recommended Operating Conditions
Electrical Characteristics
DC Characteristics
Input voltage
Input clamp voltage
Output voltage
Input current (all input pins)
3-state OFF leakage current
Output short current
Quiescent supply current (total)
Quiescent supply current (each bit)
Power supply voltage
Input voltage
Output voltage
Output current
Operating temperature
Note 1: Typical value is measured at V
Note 2: Only one output at a time should be shorted. Duration should not exceed one second.
Characteristics
Characteristics
High level
Low level
High level
Low level
High level
Low level
(unless otherwise specified, V
(Note 2)
Symbol
Symbol
DI
DI
I
I
I
I
V
I
V
V
T
CCH
CC
V
V
OZH
I
CCL
CCZ
V
I
V
OZL
V
I
I
I
OS
OH
CC1
CC2
OL
OH
opr
OL
I
IH
CC
IL
IH
IL
IK
IN
I
O
= 5.0 V and Ta = 25°C.
I
I
I
I
I
I
V
V
V
V
V
V
V
All outputs are low.
V
All outputs are high.
V
All outputs are in the
high-impedance state.
One input: V
Other inputs: V
One input: V
Other inputs: V
IK
OH
OH
OH
OL
OL
IN
IN
IN
O
O
O
IN
IN
IN
Min
-40
4.5
¾
¾
0
0
= -18 mA
= 2.7 V
= 0.5 V
= GND
= 24 mA
= 48 mA
= -3.0 mA
= -3.0 mA
= -15 mA
= V
= 2.7 V
= 0.5 V or GND
= V
= V
= V
CC
CC
CC
CC
3
Test Condition
Typ.
5.0
or ground
or ground
or ground
25
¾
¾
¾
¾
IN
IN
¾
¾
= 0.5 V
CC
= V
CC
CC
or GND
CC
or GND
Max
V
V
-15
5.5
48
85
CC
CC
= = = = 4.5 V to 5.5 V, Ta = = = = - - - - 40° ° ° ° C to 85° ° ° ° C)
- 2.1 V
Unit
mA
°C
V
V
V
V
4.75
4.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
¾
¾
¾
¾
CC
-100
Min
2.0
2.4
2.7
2.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
TD74BC541P/F
(Note 1)
Typ.
3.4
3.4
20
10
10
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
2002-07-11
-255
Max
-1.2
0.55
±1.0
±1.0
±1.0
-50
0.8
0.5
1.5
1.5
50
27
50
50
¾
¾
¾
¾
Unit
mA
mA
mA
mA
mA
mA
V
V
V