74AUP1G38GF,132 NXP Semiconductors, 74AUP1G38GF,132 Datasheet - Page 4
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74AUP1G38GF,132
Manufacturer Part Number
74AUP1G38GF,132
Description
IC NAND GATE 2-IN 6-XSON
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet
1.74AUP1G38GF132.pdf
(18 pages)
Specifications of 74AUP1G38GF,132
Number Of Circuits
1
Package / Case
6-XSON, SOT891
Logic Type
NAND Gate with Open Drain
Number Of Inputs
2
Current - Output High, Low
4mA, 4mA
Voltage - Supply
0.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Product
NAND
Logic Family
74AUP
Low Level Output Current
4 mA
Propagation Delay Time
19.5 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 125 C
Output Current
20 mA
Output Voltage
4.6 V
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
74AUP1G38GF-H
74AUP1G38GF-H
935281115132
74AUP1G38GF-H
935281115132
NXP Semiconductors
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
[2]
9. Recommended operating conditions
Table 6.
10. Static characteristics
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
74AUP1G38
Product data sheet
Symbol
V
I
V
I
V
I
I
I
T
P
Symbol
V
V
V
T
Δt/ΔV
Symbol Parameter
T
V
V
IK
OK
O
CC
GND
stg
amb
amb
CC
I
O
tot
CC
I
O
IH
IL
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5 °C the value of P
For XSON6 packages: above 118 °C the value of P
= 25 °C
HIGH-level input voltage
LOW-level input voltage
Limiting values
Recommended operating conditions
Static characteristics
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
Conditions
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
Active mode and Power-down mode
V
T
= 0.8 V
= 0.9 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 0.8 V
= 0.9 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
amb
I
O
O
< 0 V
< 0 V
= 0 V to V
= −40 °C to +125 °C
Active mode and Power-down mode
Conditions
V
tot
Rev. 4 — 7 October 2010
CC
tot
derates linearly with 7.8 mW/K.
= 0.8 V to 3.6 V
derates linearly with 4.0 mW/K.
CC
Low-power 2-input NAND gate (open drain)
Min
0.70 × V
0.65 × V
1.6
2.0
-
-
-
-
[1]
[1]
[2]
Min
−0.5
−50
−0.5
−50
−0.5
-
-
−50
−65
-
CC
CC
74AUP1G38
Min
0.8
0
0
−40
0
Typ
-
-
-
-
-
-
-
-
Max
+4.6
-
+4.6
-
+4.6
+20
+50
-
+150
250
© NXP B.V. 2010. All rights reserved.
Max
3.6
3.6
3.6
+125
200
Max
-
-
0.30 × V
-
-
0.35 × V
0.7
0.9
CC
CC
V
Unit
V
V
°C
ns/V
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
4 of 18
Unit
V
V
V
V
V
V
V
V