hm51w16165tt-7 Elpida Memory, Inc., hm51w16165tt-7 Datasheet - Page 8

• Manufacturer Part Number: hm51w16165tt-7
• Description: 16 M Edo Dram 1-mword ? 16-bit
• Manufacturer: Elpida Memory, Inc.

HM51W16165 Series, HM51W18165 Series
DC Characteristics
(Ta = 0 to +70°C, V
Parameter
Operating current*
Standby current
Standby current
(L-version)
RAS-only refresh current*
Standby current*
CAS-before-RAS refresh
current
EDO page mode current*
Battery backup current*
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Notes: 1. I
8
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while UCAS and LCAS = V
4. V
output open condition.
CC
IH
depends on output load condition when the device is selected. I
1
V
CC
1,
*
– 0.2 V, 0 V
2
4
CC
1,
2
*
= 3.3 V ± 0.3 V, V
3
Symbol
I
I
I
I
I
I
I
I
I
I
I
V
V
CC1
CC2
CC2
CC3
CC5
CC6
CC7
CC10
CC11
LI
LO
OH
OL
V
Data Sheet E0153H10
IL
0.2 V.
HM51W16165
-5
Min Max Min Max Min Max Unit
—
—
—
—
—
—
—
—
—
—
–10 10
–10 10
2.4
0
110 —
2
1
150 —
110 —
5
110 —
105 —
400 —
250 —
V
0.4
CC
SS
-6
—
—
—
–10 10
–10 10
2.4
0
= 0 V) (HM51W16165 Series)
100 —
2
1
150 —
100 —
5
100 —
95
400 —
250 —
V
0.4
CC
-7
—
—
—
—
–10 10
–10 10
2.4
0
IL
.
90
2
1
150 µA
90
5
90
85
400 µA
250 µA
V
0.4
CC
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V
IH
.
CC
max is specified at the
Test conditions
t
TTL interface
RAS, UCAS, LCAS = V
Dout = High-Z
CMOS interface
RAS, UCAS,
LCAS
Dout = High-Z
CMOS interface
RAS, UCAS,
LCAS
Dout = High-Z
t
RAS = V
UCAS, LCAS = V
Dout = enable
t
t
CMOS interface
Dout = High-Z
CBR refresh: t
µs
t
CMOS interface
RAS, UCAS,
LCAS
Dout = High-Z
0 V
0 V
Dout = disable
High Iout = –2 mA
Low Iout = 2 mA
RC
RC
RC
HPC
RAS
= min
= min
= min
= min
0.3 µs
Vin
Vout
V
V
0.2 V
IH
CC
CC
4.6 V
– 0.2 V
– 0.2 V
4.6 V
RC
= 31.3
IL
IH