k9f2808u0b-ycb0 Samsung Semiconductor, Inc., k9f2808u0b-ycb0 Datasheet - Page 11

• Manufacturer Part Number: k9f2808u0b-ycb0
• Description: 16m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC TEST CONDITION
(K9F2808X0B-YCB0, DCB0 :TA=0 to 70 C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85 C
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
VALID BLOCK
NOTE:
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correct i on.
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
K9F2808Q0B : Vcc=1.7V~1.9V , K9F2808U0B : Vcc=2.7V~3.6V unless otherwise noted)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F2808Q0B:Output Load (VccQ:1.8V +/-10%)
K9F2808U0B:Output Load (VccQ:3.0V +/-10%)
K9F2808U0B:Output Load (VccQ:3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
program factory-marked bad blocks.
CLE
H
H
X
X
X
X
X
L
L
L
L
L
K9F2808X0B
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Item
ALE
X
H
H
X
X
X
X
L
L
L
L
L
(1)
IL
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
Parameter
or V
(
T
Parameter
IH.
A
=25 C, V
CE
H
L
L
L
L
L
L
L
X
X
X
X
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
CC
Refer to the attached technical notes for a appropriate management of invalid blocks.
=1.8V/3.3V, f=1.0MHz)
WE
Symbol
Symbol
H
H
X
X
X
X
X
N
C
C
VB
Spare Array
I/O
IN
Main Array
RE
H
H
H
H
H
H
H
X
X
X
X
Test Condition
1 TTL GATE and CL=30pF
V
V
1004
0V/V
Min
IL
IN
Symbol
=0V
=0V
WP
t
t
PROG
Nop
BERS
K9F2808Q0B
X
X
H
H
H
X
X
X
H
H
L
11
0V to VccQ
CC
VccQ/2
(2)
5ns
-
Data Input
Data Output
During Read(Busy) on K9F2808U0B_Y or K9F2808U0B_V
During Read(Busy) on the devices except K9F2808U0B_Y
and K9F2808U0B_V
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Read Mode
Write Mode
Min
-
-
-
-
Typ.
Min
-
-
-
K9F2808Q0B:3 00
K9F2808U0B:200
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
2
-
-
FLASH MEMORY
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Mode
1024
Max
Max
10
10
K9F2808U0B
0.4V to 2.4V
1.5V
5ns
Max
500
2
3
3
. Do not erase or
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
s