hy5du573222afm Hynix Semiconductor, hy5du573222afm Datasheet - Page 5

• Manufacturer Part Number: hy5du573222afm
• Description: 256m 8mx32 Gddr Sdram
• Manufacturer: Hynix Semiconductor

PIN DESCRIPTION
Rev. 0.5 / Aug. 2003
/RAS, /CAS, /WE
DQS0 ~ DQS3
DQ0 ~ DQ31
DM0 ~ DM3
V
/CS0, /CS1
BA0, BA1
A0 ~ A11
V
DDQ
CK, /CK
DD
V
CKE
PIN
NC
REF
/V
/V
SS
SSQ
Supply
Supply
Supply
TYPE
Input
Input
Input
Input
Input
Input
Input
I/O
I/O
NC
Clock: CK and /CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of /CK. Output
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE
must be maintained high throughout READ and WRITE accesses. Input buffers, excluding
CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW
level after Vdd is applied.
Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-
mands are masked when CS0 or CS1 is registered high. CS0 or CS1 provides for external
bank selection on systems with multiple banks. CS0 and CS1 are considered part of the
command code. When it is the operationg state of MRS, Power up sequence, EMRS, it
should be enabled in pairs. Except this case, it can be operated, individually.
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-
CHARGE command is being applied.
Address Inputs: Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A8 is sampled during a precharge command to
determine whether the PRECHARGE applies to one bank (A8 LOW) or all banks (A8
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The
address inputs also provide the op code during a MODE REGISTER SET command. BA0
and BA1 define which mode register is loaded during the MODE REGISTER SET command
(MRS or EMRS).
Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being
entered.
Input Data Mask: DM(0~3) is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with that input data during a WRITE access. DM is sam-
pled on both edges of DQS. Although DM pins are input only, the DM loading matches the
DQ and DQS loading. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the
data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the
data on DQ24-Q31.
Data Strobe: Output with read data, input with write data. Edge aligned with read data,
centered in write data. Used to capture write data. DQS0 corresponds to the data on
DQ0-Q7; DQS1 corresponds to the data on DQ8-Q15; DQS2 corresponds to the data on
DQ16-Q23; DQS3 corresponds to the data on DQ24-Q31
Data input / output pin : Data Bus
Power supply for internal circuits and input buffers.
Power supply for output buffers for noise immunity.
Reference voltage for inputs for SSTL interface.
No connection.
DESCRIPTION
HY5DU573222AFM
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