PMEG4010ETR NXP [NXP Semiconductors], PMEG4010ETR Datasheet - Page 5

• Manufacturer Part Number: PMEG4010ETR
• Description: High-temperature 40 V, 1 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PMEG4010ETR
Product data sheet
Symbol
Fig. 4.
I
C
t
V
R
rr
FRM
d
(A)
I
10
10
10
10
F
10
-1
-2
-3
-4
1
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Forward current as a function of forward
voltage; typical values
0
(3)
(1)
(2)
j
j
j
j
j
j
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
Parameter
(4)
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
0.2
(5)
(6)
0.4
0.6
Conditions
0.8
All information provided in this document is subject to legal disclaimers.
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
V
I
T
I
F
F
006aad108
j
R
R
R
R
R
R
V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 10 V; T
= 40 V; T
= 40 V; T
= 40 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
F
(V)
1.0
26 September 2012
F
R
/dt = 40 A/µs; T
j
j
j
j
= 0.5 A; I
= 25 °C; t
= 25 °C; t
= -40 °C; t
= 125 °C; t
High-temperature 40 V, 1 A Schottky barrier rectifier
Fig. 5.
j
R(meas)
p
p
= 25 °C
j
(A)
p
I
p
≤ 300 µs;
≤ 300 µs;
= 25 °C
R
≤ 300 µs;
10
≤ 300 µs;
10
10
10
10
10
10
10
10
10
j
-10
= 25 °C
-1
-2
-3
-4
-5
-6
-7
-8
-9
= 0.1 A;
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Reverse current as a function of reverse
voltage; typical values
0
j
j
j
j
j
j
(1)
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(2)
10
(3)
(4)
Min
(5)
(6)
-
-
-
-
-
-
-
-
20
PMEG4010ETR
Typ
1.7
10
0.05
6.5
130
50
4.4
484
30
© NXP B.V. 2012. All rights reserved
006aad109
V
R
Max
(V)
13
50
1
30
-
-
-
-
40
Unit
µA
µA
µA
mA
pF
pF
ns
mV
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