PMEG6020ETP NXP [NXP Semiconductors], PMEG6020ETP Datasheet - Page 5

• Manufacturer Part Number: PMEG6020ETP
• Description: High-temperature 60 V, 2 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PMEG6020ETP
Product data sheet
Symbol
Fig. 4.
I
C
t
V
R
rr
FRM
d
(A)
I
10
10
10
10
F
10
-1
-2
-3
-4
1
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Forward current as a function of forward
voltage; typical values
0
(1)
(2)
(3)
j
j
j
j
j
j
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
Parameter
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
(4)
0.3
(5)
(6)
0.6
Conditions
V
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I
I
I
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
V
I
T
I
F
F
F
F
F
F
006aad133
j
R
R
R
R
R
R
R
(V)
= 2 A; T
= 2 A; T
= 2 A; T
= 0.5 A; I
= 1 A; dI
= 25 °C
= 5 V; T
= 10 V; T
= 60 V; T
= 60 V; T
= 60 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
0.9
j
j
j
F
= 125 °C
= 150 °C
= 175 °C
j
R
/dt = 40 A/µs; T
11 October 2012
= 25 °C; t
j
j
j
j
= 0.5 A; I
= 25 °C; t
= 25 °C; t
= -40 °C; t
= 125 °C; t
High-temperature 60 V, 2 A Schottky barrier rectifier
Fig. 5.
p
j
R(meas)
p
p
= 25 °C
≤ 300 µs;
j
(A)
p
I
p
≤ 300 µs;
≤ 300 µs;
= 25 °C
R
≤ 300 µs;
10
≤ 300 µs;
10
10
10
10
10
10
10
10
10
j
-10
= 25 °C
-1
-2
-3
-4
-5
-6
-7
-8
-9
= 0.1 A;
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Reverse current as a function of reverse
voltage; typical values
0
j
j
j
j
j
j
(1)
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(2)
20
(3)
(4)
(5)
(6)
Min
-
-
-
-
-
-
-
-
-
-
-
-
PMEG6020ETP
40
Typ
395
380
360
2.5
3.5
60
0.9
27
240
80
8.6
401
© NXP B.V. 2012. All rights reserved
V
R
006aad134
(V)
Max
480
460
450
-
-
150
15
100
-
-
-
-
60
Unit
mV
mV
mV
µA
µA
µA
µA
mA
pF
pF
ns
mV
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