atf-35143 Avago Technologies, atf-35143 Datasheet - Page 3

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atf-35143

Manufacturer Part Number
atf-35143
Description
Low Noise Pseudomorphic Hemt In A Surface Mount Plastic Package
Manufacturer
Avago Technologies
Datasheet

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Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. P
Input
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
3
ATF-35143 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
out
I
g
OIP3
V
I
P
dss
GDO
I
NF
G
= -10 dBm per tone
P
m
gss
I
1dB
d
[1]
a
[1]
[1]
Line Including
Transmission
(0.5 dB loss)
Gate Bias T
50 Ohm
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1 dB Compressed
Intercept Point
rd
Order
[3]
Parameters and Test Conditions
[4, 5]
[4]
[3]
Matching Circuit
Γ_mag = 0.66
(0.4 dB loss)
Γ_ang = 5°
Input
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
DUT
V
DS
= 1.5 V, I
V
V
V
DS
V
V
V
V
V
V
V
V
DS
V
DS
GS
V
V
V
V
V
DS
DS
DS
DS
DS
DS
V
= 1.5 V, g
V
DS
DS
= 2 V, I
= 2 V, I
DS
DS
DS
DS
DS
DS
DS
= 0.45 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 1.5 V, V
V
DS
GD
Line Including
= 10% of I
Transmission
(0.5 dB loss)
Drain Bias T
DSQ
DSQ
= V
DS
DS
DS
DS
DS
DS
DSQ
DSQ
m
50 Ohm
DS
DS
DS
DS
DS
DS
V
= 15 mA
= 15 mA
= 15 mA
= 15 mA
= 15 mA
= 15 mA
= 15 mA
= 15 mA
= I
1dB
GS
GD
= 5 mA
= 5 mA
= 5 mA
= 5 mA
= 5 mA
= 5 mA
= 5 mA
= 5 mA
GS
DS
= -4 V
, and OIP3 measurements.
dss
= 0 V
= 2 V
= 5 V
/V
dss
P
mmho
Units
dBm
dBm
dBm
dBm
mA
mA
µA
µA
dB
dB
dB
dB
V
Output
-0.65
Min.
16.5
40
90
14
19
Typ.
-0.5
120
0.4
0.5
0.3
0.4
65
15
10
18
16
20
18
21
14
19
14
10
8
9
9
[2]
-0.35
Max.
19.5
250
150
0.7
0.9
80
18

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