atf-34143 Avago Technologies, atf-34143 Datasheet - Page 5

• Manufacturer Part Number: atf-34143
• Description: Low Noise Pseudomorphic Hemt In A Surface Mount Plastic Package
• Manufacturer: Avago Technologies

ATF-34143 Typical Performance Curves, continued
Note:
1. P
5
Figure 14. Fmin and G
at V
Figure 17. NF, Gain, OP1dB and OIP3 vs. I
5.8 GHz Tuned for Noise Figure.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P
current source as is typically done with active biasing. As an example, at a V
is approached.
1dB
25
20
15
10
30
27
24
21
18
15
12
DS
9
6
3
0
0
0
measurements are performed with passive biasing. Quicescent drain current, I
=4V, I
DS
20
=60 mA.
2000
40
FREQUENCY (GHz)
a
vs. Frequency and Temperature
I
DSQ
-40 C
85 C
25 C
4000
60
(mA)
[1]
80
6000
1dB
DS
100
Gain
OP1dB
OIP3
NF
at 4 V and
. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
8000
120
1.5
1.0
0.5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 18. P
mA at 2 GHz.
Figure 15. P
=4V, I
25
20
15
10
33
31
29
27
25
23
21
19
17
-5
5
0
0
0
DS
=60 mA.
1dB
1dB
2000
, IP3 vs. Frequency and Temperature at V
vs. I
[1]
DS
P
50
OIP3
1dB
FREQUENCY (MHz)
Active Bias Tuned for NF @ 4V, 60
I
DS
DS
4000
= 4 V and I
(mA)
100
DSQ
6000
, is set with zero RF drive applied. As P
DSQ
3 V
4 V
= 10 mA, I
-40 C
85 C
25 C
8000
150
DS
d
increases to 62 mA as a P
Figure 16. NF, Gain, OP1dB and OIP3 vs. I
3.9 GHz Tuned for Noise Figure.
Figure 19. P
4V, 60 mA at 900 MHz.
DSQ
25
20
15
10
35
30
25
20
15
10
-5
5
0
5
0
the device is running closer to class
0
0
20
1dB
vs. I
40
50
DS
Active Bias Tuned for min NF @
I
60
I
DSQ
DS
1dB
(mA)
(mA)
is approached,
1dB
80
[1]
of +19 dBm
100
100
DS
Gain
OP1dB
OIP3
NF
120
3 V
4 V
at 4 V and
150
140
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0