MCR12L ONSEMI [ON Semiconductor], MCR12L Datasheet - Page 2

• Manufacturer Part Number: MCR12L
• Description: Silicon Controlled Rectifiers Reverse Blocking Thyristors
• Manufacturer: ONSEMI [ON Semiconductor]

2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 2)
Gate Trigger Current (Continuous dc)
Holding Current
Latch Current (V
Gate Trigger Voltage (Continuous dc)
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of On−State Current
(V
(I
(V
(V
(V
(V
IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA
TM
D
D
D
D
D
= Rated V
= 12 V, R
= 12 V, Gate Open, Initiating Current = 200 mA)
= 12 V, R
= Rated V
= 24 A)
L
L
DRM
D
DRM
= 100 W)
= 100 W)
= 12 V, Ig = 20 mA)
, Exponential Waveform, Gate Open, T
and V
Junction−to−Case
Junction−to−Ambient
RRM
; Gate Open)
Characteristic
Characteristic
(T
J
MCR12LD, MCR12LM, MCR12LN
= 25 C unless otherwise noted)
http://onsemi.com
J
= 125 C)
2
T
T
J
J
= 25 C
= 125 C
Symbol
Symbol
I
R
R
I
dv/dt
DRM
V
V
di/dt
RRM
I
T
GT
I
qJC
qJA
I
TM
GT
H
L
L
,
Min
100
2.0
4.0
6.0
0.5
−
−
−
−
Value
62.5
0.65
Typ
260
250
2.2
4.0
10
12
−
−
−
−
Max
0.01
2.0
2.2
8.0
0.8
20
30
50
−
V/ms
A/ms
Unit
Unit
C/W
mA
mA
mA
mA
V
V
C