ST2300 STANSON [Stanson Technology], ST2300 Datasheet
ST2300
Manufacturer Part Number
ST2300
Description
N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
1.ST2300.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST2300
Manufacturer:
STANSON
Quantity:
20 000
Part Number:
ST2300S23RG
Manufacturer:
STANSON
Quantity:
20 000
Part Number:
ST2300SRG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
The ST2300 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
PART MARKING
SOT-23-3L
ORDERING INFORMATION
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
※ ST2300S23RG ; S23 : SOT23-3L R : Tape Reel ; G : Pb – Free
※ Process Code : A ~ Z ; a ~ z
Y: Year Code
1.Gate
ST2300S23RG
Part Number
G
1
1
42YA
2.Source
D
3
3
A: Process Code
S
2
2
3.Drain
SOT-23-3L
Package
1
N Channel Enhancement Mode MOSFET
FEATURE
Maximum DC current capability
20V/6.0A, R
20V/5.0A, R
20V/4.5A, R
20V/4.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and
SOT-23-3L package design
@V
@V
@V
@V
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Part Marking
GS
GS
GS
GS
DS(ON)
ST2300
= 22mΩ (Typ.)
= 10V
= 4.5V
= 2.5V
= 1.8V
42YA
= 26mΩ
= 29mΩ
= 35mΩ
ST2300 2005. V1
4A
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