ST2300 STANSON [Stanson Technology], ST2300 Datasheet - Page 3

• Manufacturer Part Number: ST2300
• Description: N Channel Enhancement Mode MOSFET
• Manufacturer: STANSON [Stanson Technology]

ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Tranconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Symbol
V
R
V
(BR)DSS
I
t
t
I
I
DS(on)
C
GS(th)
V
C
D(on)
Q
Q
C
d(off)
d(on)
g
Q
GSS
DSS
tr
oss
tf
SD
rss
iss
fs
gs
gd
g
3
V
V
V
V
V
V
V
V
V
V
V
DS
I
DS
GS
GS
GS
GS
DS
GS
DS
S
DS
DS
=1.7A,V
=V
=
≧
=2.5V,I
=1.8V,I
=0V,I
=0V,V
=
=15V,I
Condition
=20V,V
=20V,V
V
V
V
V
V
4.5V,I
R
T
N Channel Enhancement Mode MOSFET
F=1MH
GEN
10V,I
V
5V,V
R
GS
I
GS
DD
DS
DS
I
J
L
GS
D
D
G
=85 ℃
=10 Ω
=4.5V
≣ 5A
=6 Ω
,I
=1A
=10V
=10V
=10V
=4.5V
=0V
D
D
GS
GS
=250uA
=250uA
D
D
GS
D
D
D
GS
GS
= ± 20V
=5.0A
=6.0A
=4.5V
=4.5A
=4.0A
=5.0A
z
=0V
=0V
=0V
Min Typ Max Unit
0.4
20
6
ST2300
0.022
0.026
0.029
0.035
ST2300 2005. V1
600
120
100
0.9
1.4
2.1
30
10
15
40
45
30
± 100
1.0
1.3
10
13
25
60
65
40
1
4A
nA
uA
nC
nS
pF
Ω
V
V
A
S
V