BT136-500F TECCOR [Teccor Electronics], BT136-500F Datasheet - Page 59
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BT136-500F
Manufacturer Part Number
BT136-500F
Description
Thyristor Product Catalog
Manufacturer
TECCOR [Teccor Electronics]
Datasheet
1.BT136-500F.pdf
(223 pages)
- Current page: 59 of 223
- Download datasheet (3Mb)
Data Sheets
Electrical Specifications Notes
(1) See Figure E5.1 through Figure E5.9 for current ratings at
(2) See Figure E5.10 for I
(3) See Figure E5.11 for instantaneous on-state current (i
(4) See Figure E5.12 for V
(5) See Figure E5.13 for I
(6) For more than one full cycle, see Figure E5.14.
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-
(8) See Figure E5.15 for t
(9) Test conditions as follows:
©2002 Teccor Electronics
Thyristor Product Catalog
-40 °C
T
C
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
specified operating temperatures.
state voltage (v
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 µs minimum,
15 µs maximum. See Figure E5.20 and Figure E5.21.
– T
– Rate-of-rise of current 10 A/µs
– Rate-of-reversal of current 5 A/µs
– I
– V
– V
– Rate-of-rise reapplied forward blocking voltage = 5 V/µs
– Gate Bias = 0 V, 100
=
TM
C
RRM
R
(4) (12) (22)
or T
= 15 V minimum, V
= 1 A (50 µs pulse), Repetition Rate = 60 pps
25 °C
Volts
T
MAX
= Rated
V
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
C
L
GT
=
80 °C, rectangular current waveform
T
110 °C
) TYP.
T
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
C
=
GT
H
gt
GT
versus T
versus I
DRM
versus T
mAmps
(5) (19)
versus T
(during turn-off time interval)
MAX
I
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
H
= Rated
GT
C
C
C
or T
.
or T
or T
Amps
I
(17)
GM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
L
L
.
.
L
.
V
Volts
MIN
GRM
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
T
) versus on-
Watts
P
(17)
GM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
E5 - 5
P
Watts
G(AV)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(10) Test condition is maximum rated RMS current except TO-92
(11) See package outlines for lead form configurations. When ordering
(12) V
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
(14) I
(15) I
(16) I
(17) Pulse Width 10 µs
(18) I
(19) Latching current can be higher than 20 mA for higher I
(20) T
(21) I
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) T
60/50 Hz
(6) (13)
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
devices are 1.2 A
special lead forming, add type number as suffix to part number.
for measuring gate trigger voltage and gate trigger current.)
temperature at maximum rated current.
2N6565 Series devices
2N6565 Series devices
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
125 °C
Amps
GT
H
H
GT
DRM
I
TSM
C
C
D
= 10 mA maximum at T
= 6 mA maximum at T
or T
= 110 °C
= 6 V dc, R
= 500 µA maximum at T
= 350 µA maximum at T
and I
L
= T
T
RRM
Volts/µSec
C
dv/dt
J
= 110 °C
TYP
for test conditions in off state
10
10
10
10
10
10
8
8
8
8
8
8
8
8
8
8
8
8
= 50 µA for 2N5064 and 100 µA for 2N6565 at
L
= 100
PK
; T106/T107 devices are 4 A
Amps/µSec
C
(See Figure E5.19 for simple test circuit
C
di/dt
= -40 °C for T106 devices
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
C
= -65 °C for 2N5064 Series and
C
= -40 °C for T106 devices
= -65 °C for 2N5064 Series and
µSec
TYP
t
(8)
4
4
4
5
5
5
gt
4
4
4
5
5
5
4
4
4
5
5
5
http://www.teccor.com
µSec
MAX
(9)
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
t
PK
q
+1 972-580-7777
Sensitive SCRs
.
GT
Amps
types.
l
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
2
t
2
Sec
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