blv8n60 Estek Electronics Co. Ltd, blv8n60 Datasheet
blv8n60
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blv8n60 Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient th j-a N-channel Enhancement Mode Power MOSFET . =25 C unless otherwise noted ) C Parameter =100 C (Note 1) (Note 1) (Note 1) Parameter Max. Max Total 6 Pages BLV8N60 BV 600V DSS 1.2Ω Ω Ω Ω R DS(ON) I 7.5A D Value Units 600 7 147 W 1.18 W/℃ ...
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... GS V =480V DD I =7. =10V GS (note3) V =300V DD I =7. =25 G note3 (note3) V =25V 1MHz Test Conditions V =0V, I =7. =0V, I =7.5A(note3 /dt =100A/ Total 6 Pages BLV8N60 Min. Typ. Max. 600 - - - 0 1 8 100 - - ±100 - 170 - - 140 ...
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... Typical Characteristics Fig 1. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature N-channel Enhancement Mode Power MOSFET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Junction Temperature - 3 - Total 6 Pages BLV8N60 ...
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... Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 7. Gate Charge Characteristics N-channel Enhancement Mode Power MOSFET Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 8. Capacitance Characteristics - 4 - Total 6 Pages BLV8N60 ...
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... Typical Characteristics （ （ （ （ continued） ） ） ） Fig 10. Transient Thermal Response Curve N-channel Enhancement Mode Power MOSFET Fig 9. Maximum Safe Operating Area - 5 - Total 6 Pages BLV8N60 ...
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Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 13. Switching Time Circuit Fig 15. Unclamped Inductive Switching Test Circuit N-channel Enhancement Mode Power MOSFET Fig 12. Gate Charge Waveform Fig 14. Switching Time Waveform Fig 16. Unclamped Inductive ...