blv8n60 Estek Electronics Co. Ltd, blv8n60 Datasheet - Page 2

• Manufacturer Part Number: blv8n60
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Estek Electronics Co. Ltd

Electrical Characteristics
Note：
I
I
V
t
Q
Source-Drain Diode Characteristics
BV
R
V
g
I
I
Q g
Q gs
Q gd
t
t
t
t
C iss
C oss
C rss
S
SM
r r
/ T
DSS
GSS
SD
(on)
r
(off)
f
r r
Symbol
BV
GS(th)
DS(ON)
fs
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
(3) Pulse width
DSS
Symbol
J
DSS
L=7.3mH, Ias=7.5A，Vdd=50V，Rg=25 ，staring Tj=25C
Continuous Source Diode Forward Current
Pulsed Source Diode Forward Current (note1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance V
Gate Threshold Voltage
Forward Transconductance (note3) V
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
300 us; duty cycle
Parameter
Parameter
(
T
C
=25C unless otherwise noted )
2%
Total 6 Pages
V
V
dI
- 2 -
V
Reference to 25℃,
I
V
V
V
V
V
I
V
V
I
R
note3
V
V
f = 1MHz
D
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
F
DD
GS
DD
DS
GS
=1mA
=7.5A
=7.5A
G
Test Conditions
N-channel Enhancement Mode Power MOSFET
Test Conditions
/dt =100A/us
=25
=0V, I
=0V, I
=0V, I
=10V, I
=V
=15V, I
=600V, V
=480V , V
= ±20V
=25V
=480V
=10V
=300V
=0V
GS
S
, I
=7.5A(note3)
S
D
=7.5A
D
=250uA
D
D
=250uA
=3.75A
=3.75A
(note3)
(note3)
GS
GS
=0V
=0V
Min.
Min.
600
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1074
1020
35.5
14.1
158
0.6
8.0
8.1
29
2
-
-
-
-
-
-
-
-
-
-
-
-
-
BLV8N60
Max.
Max.
7.5
±100
1.4
30
100
170
140
130
1.2
70
-
-
4
1
-
-
-
-
-
-
-
-
-
Units
Units
V/℃
uC
ns
uA
uA
nA
nC
nC
nC
pF
pF
pF
Ω
ns
ns
ns
ns
A
A
V
V
V
S